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MRF101BN
MRF101BNReference image

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Mfr. #:
MRF101BN
Batch:
new
Description:
Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V
Datasheet:
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Specifications
frequently asked question
Product AttributeAttribute Value
Transistor Polarity N-Channel
Technology Si
Id-Continuous Drain Current 8.8 A
Vds-Drain-Source Breakdown Voltage 133 V
Rds On-Drain-Source On-Resistance
Operating Frequency 1.8 MHz to 250 MHz
Gain 21.1 dB
Output Power 100 W
Minimum Operating Temperature - 40 C
Maximum Operating Temperature 150 C
Mounting Style Through Hole
Package/Case TO-220-3
Package Tube
Other product information

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Tips: Small orders are not expensive, may only need a few dollars, and will not generate tariffs. About 2 weeks of aging; If the delivery is required within a few days, the Courier fee will increase a lot.

In Stock: 415
Qty.Unit PriceExt. Price
1+ $27.0723 $27.0723
10+ $20.8961 $208.961
25+ $19.0191 $475.4775
50+ $18.9968 $949.84
100+ $16.9065 $1690.65
500+ $15.8606 $7930.3
Enter Quantity:
Unit Price:
$0.47
Ext. Price:
$0.94
In Stock:
415
Minimum:
1
MPQ:
1
Multiples:
1
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